2SK1961 spec: N-channel junction silicon FET, high-frequency low-noise amp application

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2SK1961 Datasheet a Spec

Výrobcem : SANYO

Balení : 2019A

Špendlíky : 3

Teplota : Min 0 °C | Max 0 °C

Velikost : 140 KB

Aplikace : N-channel junction silicon FET, high-frequency low-noise amp application