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IRF822FI spec: N-channel enhancement mode power MOS transistor, 500V, 1.9A
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IRF822FI Datasheet a Spec
Výrobcem : ST Microelectronics
Balení : ISOWATT220
Špendlíky : 3
Teplota : Min -65 °C | Max 150 °C
Velikost : 185 KB
Aplikace : N-channel enhancement mode power MOS transistor, 500V, 1.9A
IRF822FI PDF Download