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STH6N100FI spec: N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100FI Podobné
- STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
- STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6N100
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6N100FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
- STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
STH6N100FI Datasheet a Spec
Výrobcem : ST Microelectronics
Balení :
Špendlíky : 0
Teplota : Min 0 °C | Max 0 °C
Velikost : 222 KB
Aplikace : N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100FI PDF Download