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IRFY430M-T257 spec: 500V Vdss N-Channel FET (field effect transistor)
IRFY430M-T257 Podobné
- IRFY044
- 60V Vdss N-Channel FET (field effect transistor)
- IRFY120
- 100V Vdss N-Channel FET (field effect transistor)
- IRFY130
- 100V Vdss N-Channel FET (field effect transistor)
- IRFY140
- 100V Vdss N-Channel FET (field effect transistor)
- IRFY240C
- 200V Vdss N-Channel FET (field effect transistor)
- IRFY340
- 400V Vdss N-Channel FET (field effect transistor)
- IRFY430
- 500V Vdss N-Channel FET (field effect transistor)
- IRFY430M-T257
- 500V Vdss N-Channel FET (field effect transistor)
IRFY430M-T257 Datasheet a Spec
Výrobcem : Semelab
Balení : TO257AA
Špendlíky : 0
Teplota : Min 0 °C | Max 0 °C
Velikost : 21 KB
Aplikace : 500V Vdss N-Channel FET (field effect transistor)
IRFY430M-T257 PDF Download