28LV256SI-4 spec: Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.

28LV256SI-4 Podobné

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28LV64TM-3
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28LV256SI-3
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
28LV64JM-5
- Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
28LV64TI-6
- Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
28LV256TM-4
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
28LV256SM-6
- Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
28LV256PI-5
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28LV256SI-4 Datasheet a Spec

Výrobcem : Turbo IC

Balení : SOIC

Špendlíky : 28

Teplota : Min -40 °C | Max 85 °C

Velikost : 45 KB

Aplikace : Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.