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2N3055 spec: High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
2N3055 Podobné
- 2N3055
- High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
- 2N3055
- NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications.
- 2N3055H
- NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications.
2N3055 Datasheet a Spec
Výrobcem : Usha
Balení : TO-3
Špendlíky : 3
Teplota : Min -65 °C | Max 200 °C
Velikost : 52 KB
Aplikace : High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
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