BU407 spec: Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.

BU407 Podobné

BU406
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
BU406D
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V.
BU406H
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
BU407
- Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.
BU408
- NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.

BU407 Datasheet a Spec

Výrobcem : WingShing

Balení : TO-220

Špendlíky : 3

Teplota : Min 0 °C | Max 0 °C

Velikost : 70 KB

Aplikace : Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.