BUT11AF spec: NPN silicon diffused power transistor. For switching power circuits

BUT11AF Podobné

BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11A
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11AF
- NPN silicon diffused power transistor. For switching power circuits
BUT12
- NPN silicon diffused power transistor. For switching power circuits
BUT12A
- NPN silicon diffused power transistor. For switching power circuits
BUT12AF
- NPN silicon diffused power transistor. For switching power circuits

BUT11AF Datasheet a Spec

Výrobcem : WingShing

Balení : TO-220F

Špendlíky : 3

Teplota : Min 0 °C | Max 0 °C

Velikost : 76 KB

Aplikace : NPN silicon diffused power transistor. For switching power circuits