MTB30P06V Podobné

  • MTB30N06VL
    • TMOS V power field effect transistor
  • MTB30P06V
    • TMOS V power field effect transistor
  • MTB30P06V
    • TMOS V power field effect transistor
  • MTB33N10E
    • TMOS E-FET high energy power FET
  • MTB36N06V
    • TMOS V power field effect transistor
  • MTB3N120E
    • TMOS E-FET high energy power FET D2PAK for surface mount
  • MTB3N120E
    • TMOS E-FET high energy power FET D2PAK for surface mount
  • MTB3N60E
    • TMOS E-FET high energy power FET D2PAK for surface mount

MTB30P06V Datasheet a Spec

Výrobcem : Motorola 

Balení : DPAK 

Špendlíky : 4 

Teplota : Min -55 °C | Max 175 °C

Velikost : 271 KB

Aplikace : TMOS V power field effect transistor 

MTB30P06V PDF Download