Cesta:OKDatasheet > Semiconductor list > Motorola Datasheet > MTB3N120E
MTB3N120E spec: TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N120E Podobné
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
- TMOS E-FET high energy power FET
- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N120E Datasheet a Spec
Výrobcem : Motorola
Balení : DPAK
Špendlíky : 4
Teplota : Min -55 °C | Max 150 °C
Velikost : 354 KB
Aplikace : TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N120E PDF Download