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MJD112 spec: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD112 Podobné
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD112 Datasheet a Spec
Výrobcem : ST Microelectronics
Balení :
Špendlíky : 0
Teplota : Min 0 °C | Max 0 °C
Velikost : 92 KB
Aplikace : COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD112 PDF Download