MJD127T4 Podobné

  • MJD112
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD117
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD122
    • COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
  • MJD122-1
    • "NPN darlington transistor for high DC current gain, 100V, 5A"
  • MJD122T4
    • NPN darlington transistor for high DC current gain, 100V, 5A
  • MJD127-1
    • PNP darlington transistor for high DC current gain, 100V, 5A
  • MJD127T4
    • PNP darlington transistor for high DC current gain, 100V, 5A

MJD127T4 Datasheet a Spec

Výrobcem : ST Microelectronics 

Balení : TO-252 

Špendlíky : 3 

Teplota : Min -65 °C | Max 150 °C

Velikost : 100 KB

Aplikace : PNP darlington transistor for high DC current gain, 100V, 5A 

MJD127T4 PDF Download