WMBT5401LT1 spec: PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V

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WMBT5401LT1 Datasheet a Spec

Výrobcem : WingShing

Balení : SOT-23

Špendlíky : 3

Teplota : Min 0 °C | Max 0 °C

Velikost : 37 KB

Aplikace : PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V