WMBT5551LT1 spec: NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V

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WMBT5551LT1 Datasheet a Spec

Výrobcem : WingShing

Balení : SOT-23

Špendlíky : 3

Teplota : Min 0 °C | Max 0 °C

Velikost : 39 KB

Aplikace : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V